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Brand: YZPST
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
Model No.: YZPST-Z20A-ZK20A18
Place of Origin: China
Good Performance Fast Diode YZPST-Z20A-ZK20A18 Quick recovery diodes are also commonly represented by graphics symbols of ordinary diodes, either in text or in type.Fast recovery diodes are similar to ordinary diodes, but the manufacturing process is different from that of ordinary single-pole tubes.The doping...
Brand: YZPST
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
Model No.: YZPST-SD233N/R
Place of Origin: CHINA
High Power FAST Recovery Diode FAST RECOVERY DIODES, Stud Version Features: High power FAST recovery diode series, 1.0 to 2.0 μs recovery time, High voltage ratings up to 5000V, High current capability, Optimized turn on and turn off characteristics, Low forward recovery, Fast and soft reverse recover, Compression...
China Fast Recovery Stud Diode Suppliers
Fast Recovery Diode (FRD) is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in switching power supplies, PWM pulse width modulators, inverters and other electronic circuits as high-frequency rectifier diodes. Free-wheeling or damper diodes are used. The internal structure of the fast Recovery Diode is different from that of an ordinary PN junction diode. It belongs to a PIN junction diode, that is, a base region I is added between the P-type silicon material and the N-type silicon material to form a PIN silicon wafer. Since the base area is thin and the reverse recovery charge is small, the fast recovery diode has a short reverse recovery time, a low forward voltage drop, and a high reverse breakdown voltage (withstanding voltage).
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Mr. John chang
Tel:86-514-87782298
Fax:86-514-87782297
Mobile Phone:+8613805278321
Email:info@yzpst.com
Address: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.